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FTK0954T Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FTK0954T
Description  100V N-Channel MOSFETs
PDF  5 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK0954T Datasheet(HTML) 2 Page - First Silicon Co., Ltd

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100V N-Channel MOSFETs
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
100
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.09
---
V/℃
IDSS
Drain-Source Leakage Current
VDS=100V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=80V , VGS=0V , TJ=125℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=± 20V , VDS=0V
---
---
±
100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V , ID=1A
---
260
310
mΩ
VGS=4.5V , ID=0.5A
---
270
320
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.2
1.8
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-5
---
mV/℃
gfs
Forward Transconductance
VDS=10V , ID=2A
---
2.3
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge2 , 3
VDS=50V , VGS=10V , ID=1A
---
9
18
nC
Qgs
Gate-Source Charge2 , 3
---
2.3
4.6
Qgd
Gate-Drain Charge2 , 3
---
1.1
2.5
Td(on)
Turn-On Delay Time2 , 3
VDD=50V , VGS=10V , RG=3.3Ω
ID=1A
---
5.2
10
ns
Tr
Rise Time2 , 3
---
6.8
12
Td(off)
Turn-Off Delay Time2 , 3
---
14.5
28
Tf
Fall Time2 , 3
---
2.1
5
Ciss
Input Capacitance
VDS=25V , VGS=0V , F=1MHz
---
492
800
pF
Coss
Output Capacitance
---
27
50
Crss
Reverse Transfer Capacitance
---
15
25
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
2.8
5.6
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
4
A
ISM
Pulsed Source Current
---
---
8
A
VSD
Diode Forward Voltage
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
trr
Reverse Recovery Time2
IS=1A , dI/dt=100A/µs
TJ=25℃
---
---
---
ns
Qrr
Reverse Recovery Charge2
---
---
---
nC
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3.
Essentially independent of operating temperature.
Electrical Characteristics (TJ=25 , unless otherwise noted)
Drain-Source Diode Characteristics and Maximum Ratings
2018. 04. 19
2/5
Revision No : 0
FTK0954T



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