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FTK0959D Datasheet(PDF) 2 Page - First Silicon Co., Ltd |
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FTK0959D Datasheet(HTML) 2 Page - First Silicon Co., Ltd |
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2 / 5 page ![]() 100V P-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -100 --- --- V IDSS Drain-Source Leakage Current VDS=-100V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-80V , VGS=0V , TJ=85℃ --- --- -10 uA IGSS Gate-Source Leakage Current VGS=± 20V , VDS=0V --- --- ± 100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=-10V , ID=-15A --- 36 45 mΩ VGS=-4.5V , ID=-10A --- 40 55 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.2 --- -2.5 V gfs Forward Transconductance VDS=-10V , ID=-5A --- 22 --- S Dynamic and switching Characteristics Qg Total Gate Charge3,4 VDS=-50V , VGS=-10V , ID=-10A --- 98 150 nC Qgs Gate-Source Charge3,4 --- 16.2 30 Qgd Gate-Drain Charge3,4 --- 13.8 26 Td(on) Turn-On Delay Time3,4 VDD=-50V , VGS=-10V , RG=25Ω ID=-5A --- 58 105 ns Tr Rise Time3,4 --- 24 50 Td(off) Turn-Off Delay Time3,4 --- 215 450 Tf Fall Time3,4 --- 94 180 Ciss Input Capacitance VDS=-25V , VGS=0V , F=1MHz --- 6315 9000 pF Coss Output Capacitance --- 220 330 Crss Reverse Transfer Capacitance --- 50 100 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -30 A ISM Pulsed Source Current --- --- -60 A VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=-50V,VGS=-10V,L=0.1mH,IAS=-60A.,Starting TJ=25℃ 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings 2019. 11. 18 2/5 Revision No : 0 FTK0959D |
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