100V N-Channel MOSFETs

Symbol

Parameter

Rating

Units

Drain-Source Voltage

100

V

Gate-Sou

rce Voltage

± 20

V

160

A

100

A

Drain Current – Pulsed

1

640

A

EAS

Single Pulse Avalanche Energy

2

280

mJ

IAS

Single Pulse Avalanche Current

2

75

A

208

W

Power Dissipation – Derate above 25℃

1.66

W/℃

Storage Temperature Range

-50 to 150

℃

Operating Junction Temperature Range

-50 to 150

℃

BVDSS

RDSON

ID

100V

3.5m

Ω

160A

Symbol

Parameter

Typ.

Max.

Unit

Thermal Resistance Junction to ambient

---

62

℃/W

Thermal Resistance Junction to Case

---

0.6

℃/W

These N-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

 100V,160A, RDS(ON) =3.5m

Ω@VGS = 10V

 Improved dv/dt capability

 Fast switching

 100% EAS Guaranteed

 Green Device Available

General Description

Features

Applications

Thermal Characteristics

TO-220 Pin Configuration

D

G

S

 Networking

 Load Switch

 LED applications

 Quick Charger

SEMICONDUCTOR

TECHNICAL DATA

FTK0970P

2019. 03. 06

1/5

Revision No : 0

1

3

2

1. Gate

2. Drain

3. Source