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FTK0976D Datasheet(PDF) 1 Page - First Silicon Co., Ltd |
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FTK0976D Datasheet(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 5 page  Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Sou rce Voltage +20 / -12 V ID Drain Current – Continuous (TC=25℃) 60 A Drain Current – Continuous (TC=100℃) 38 A IDM Drain Current – Pulsed1 240 A EAS Single Pulse Avalanche Energy2 211 mJ IAS Single Pulse Avalanche Current2 65 A PD Power Dissipation (TC=25℃) 94 W Power Dissipation – Derate above 25℃ 0.75 W/℃ TSTG Storage Temperature Range -50 to 150 ℃ TJ Operating Junction Temperature Range -50 to 150 ℃ BVDSS RDSON ID 100V 9.2m Ω 60A Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient --- 62 ℃/W RθJC Thermal Resistance Junction to Case --- 1.33 ℃/W These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. 100V,60A, RDS(ON) =9.2m Ω@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available General Description Features Applications Thermal Characteristics D G S Networking Load Switch LED applications Quick Charger 100V N-Channel MOSFETs TO-252 Pin Configuration 1 1. Gate 2. Drain 3. Source 3 2 Absolute Maximum Ratings (Tc=25℃ unless otherwise noted) 2018. 12. 24 1/5 Revision No : 0 SEMICONDUCTOR TECHNICAL DATA FTK0976D |
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