2018. 12. 05

2/5

FTK1482

Revision No : 1

5. THERMAL CHARACTERISTICS

1.Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper

2.Surface mounted on FR4 board using minimum pad size, 1oz copper

4.Repetitive rating, pulse width limited by junction temperature TJ =150°C.

6. ELECTRICAL CHARACTERISTICS (Ta= 25°C)

OFF CHARACTERISTICS

Characteristic

Drain-to-Source Breakdown Voltage

(ID =250µA, VGS =0V)

Zero Gate Voltage Drain Current

(VDS =16V, VGS =0V)

Gate-to-source Leakage Current

(VDS =0V, VGS =±5V)

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS =VGS , ID =250µA)

Static Drain-Source On resistance

(VGS = 4.5V, ID = 0.55A)

(VGS = 2.5V, ID = 0.45A)

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Threshold Gate Charge

Gate-to-Source Charge

Gate-to-Drain Charge

SWITCHING CHARACTERISTICS

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

BODY DIODE CHARACTERISTICS

Diode Forward Voltage

(VGS = 0 V, IS = 2A)

Steady State

Junction-to-Ambient Thermal Resistance(Note 2)

Parameter

Junction-to-Case Thermal Resistance

Max

335

395

430

535

300

Min

Typ.

-

275

-

325

-

375

-

445

Junction-to-Ambient Thermal Resistance(Note 1)

t ≤ 10s

Steady State

Steady State

V

VSD

0.8

1.2

-

-

-

-

98

128

2600

677

ns

pF

Qg

Qgs

Qgd

-

5

-

Crss

Qg

nC

-

33

-

-

100

-

95

130

Ciss

Coss

µA

µA

Symbol

Symbol

Unit

-

260

/W

(VGS = 0 V, f =

100 KHz, VDS

=10 V)

(VDD =10V,

VGS =4.5V,ID

=1A, RG =6Ω)

tD(on)

tr

tD(off)

tf

-

-

-

-

-

(VGS = 4.5 V,

VDS = 10 V,ID

= 1A)

-

1

Typ.

Max.

Unit

V(BR)DSS

V

30

-

-

Min.

V

RDS(ON)

IGSS

-

-

± 10

VGS(th)

1.4

0.6

IDSS

-

-

75

t ≤ 10s

3.Repetitive rating, pulse width limited by junction temperature, tp =10μs, Duty Cycle=1%

mΩ

247

-

-

-

4.7

-

-

3.6

-

-

1.9

-

-

1.6