RN2114

~RN2118

2001-06-07

1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2114,RN2115,RN2116

RN2117,RN2118

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN1114~RN1118

Equivalent Circuit and Bias Resister Values

°°°°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

−50

V

Collector-emitter voltage

RN2114~2118

−50

V

RN2114

−5

RN2115

−6

RN2116

−7

RN2117

−15

Emitter-base voltage

RN2118

−25

V

Collector current

−100

mA

Collector power dissipation

100

mW

Junction temperature

150

°C

Storage temperature range

RN2114~2118

−55~150

°C

JEDEC

―

EIAJ

―

TOSHIBA

2−2H1A

Weight: 2.4mg

Unit: mm

Type No.

R1 (kΩ)

R2 (kΩ)

RN2114

1

10

RN2115

2.2

10

RN2116

4.7

10

RN2117

10

4.7

RN2118

47

10