Electronic Components Datasheet Search
  English  ▼

X  

IPZA65R029CFD7 Datasheet(PDF) 5 Page - Infineon Technologies AG

Part # IPZA65R029CFD7
Description  650V CoolMOS짧 CFD7 SJ Power Device
PDF  14 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPZA65R029CFD7 Datasheet(HTML) 5 Page - Infineon Technologies AG

  IPZA65R029CFD7 Datasheet HTML 1Page - Infineon Technologies AG IPZA65R029CFD7 Datasheet HTML 2Page - Infineon Technologies AG IPZA65R029CFD7 Datasheet HTML 3Page - Infineon Technologies AG IPZA65R029CFD7 Datasheet HTML 4Page - Infineon Technologies AG IPZA65R029CFD7 Datasheet HTML 5Page - Infineon Technologies AG IPZA65R029CFD7 Datasheet HTML 6Page - Infineon Technologies AG IPZA65R029CFD7 Datasheet HTML 7Page - Infineon Technologies AG IPZA65R029CFD7 Datasheet HTML 8Page - Infineon Technologies AG IPZA65R029CFD7 Datasheet HTML 9Page - Infineon Technologies AG Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 14 page
background image
5
650VCoolMOSªCFD7SJPowerDevice
IPZA65R029CFD7
Rev.2.1,2020-08-12
Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Drain-source breakdown voltage
V(BR)DSS
650
-
-
V
VGS=0V,ID=1mA
Gate threshold voltage
V(GS)th
3.5
4
4.5
V
VDS=VGS,ID=1.79mA
Zero gate voltage drain current
1)
IDSS
-
-
-
27
1
54
µA
VDS=650V,VGS=0V,Tj=25°C
VDS=650V,VGS=0V,Tj=125°C
Gate-source leakage current
IGSS
-
-
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
-
0.024
0.053
0.029
-
VGS=10V,ID=35.8A,Tj=25°C
VGS=10V,ID=35.8A,Tj=150°C
Gate resistance
RG
-
3.8
-
f=1MHz,opendrain
Table5Dynamiccharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Input capacitance
Ciss
-
7149
-
pF
VGS=0V,VDS=400V,f=250kHz
Output capacitance
Coss
-
106
-
pF
VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
related
2)
Co(er)
-
247
-
pF
VGS=0V,VDS=0...400V
Effective output capacitance, time
related
3)
Co(tr)
-
2584
-
pF
ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time
td(on)
-
54
-
ns
VDD=400V,VGS=13V,ID=35.8A,
RG=1.8
Ω;seetable9
Rise time
tr
-
3
-
ns
VDD=400V,VGS=13V,ID=35.8A,
RG=1.8
Ω;seetable9
Turn-off delay time
td(off)
-
159
-
ns
VDD=400V,VGS=13V,ID=35.8A,
RG=1.8
Ω;seetable9
Fall time
tf
-
3
-
ns
VDD=400V,VGS=13V,ID=35.8A,
RG=1.8
Ω;seetable9
Table6Gatechargecharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Gate to source charge
Qgs
-
41
-
nC
VDD=400V,ID=35.8A,VGS=0to10V
Gate to drain charge
Qgd
-
44
-
nC
VDD=400V,ID=35.8A,VGS=0to10V
Gate charge total
Qg
-
145
-
nC
VDD=400V,ID=35.8A,VGS=0to10V
Gate plateau voltage
Vplateau
-
5.7
-
V
VDD=400V,ID=35.8A,VGS=0to10V
1) Maximum specification is defined by calculated six sigma upper confidence bound
2)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
3)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com