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HTT1213E Datasheet(PDF) 2 Page - Hitachi Semiconductor

Part # HTT1213E
Description  Silicon NPN Epitaxial Twin Transistor
PDF  4 Pages
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

HTT1213E Datasheet(HTML) 2 Page - Hitachi Semiconductor

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HTT1213E
Rev.0, Aug. 2001, page 2 of 4
Absolute Maximum Ratings
(Ta = 25
°C)
Ratings
Item
Symbol
Q1 and Q2
Unit
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
4V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
50
mA
Collector power dissipation
P
C
Total 200*
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to
+150
°C
*Value on PCB. (FR–4(13 x 13 x 0.635 mm))
Electrical Characteristics (Q1 and Q2)
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
15

VI
C = 10 µA, IE = 0
Collector cutoff current
I
CBO

0.1
mA
V
CB = 15 V, IE = 0
Collector cutoff current
I
CEO

1mA
V
CE = 4 V, RBE = infinite
Emitter cutoff current
I
EBO

0.2
mA
V
EB = 0.8 V, IC = 0
DC current transfer ratio
h
FE
100
130
170
V
CE = 1 V, IC = 5 mA
Reverse transfer capacitance C
re
0.30
0.45
pF
V
CB = 1 V, f = 1 MHz
Emitter ground
Gain bandwidth product
f
T
10
12
GHz
V
CE = 1 V, IC = 5 mA, f = 1 GHz
Forward transfer coefficient
|S
21|
2
13
16
dB
Noise figure
NF
1.0
2.0
dB
V
CE = 1 V, IC = 5 mA,
f = 900 MHz,
Γ
S = ΓL = 50 Ω



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