STD15N60DM6 datasheet(2/17 Pages) STMICROELECTRONICS

Part #	STD15N60DM6

Description	N-channel 600 V, 286 mΩ typ., 12 A MDmesh DM6 Power MOSFET in a DPAK package

PDF	17 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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2 / 17 page

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

7.3

IDM (1)

Drain current (pulsed)

PTOT

Total power dissipation at TC = 25 °C

110

IAR (2)

Avalanche current, repetitive or not repetitive

EAS (3)

Single pulse avalanche energy

240

dv/dt (4)

Peak diode recovery voltage slope

100

V/ns

di/dt(4)

Peak diode recovery current slope

1000

A/µs

dv/dt (5)

MOSFET dv/dt ruggedness

100

V/ns

Tstg

Storage temperature range

-55 to 150

°C

Operating junction temperature range

1. Pulse width is limited by safe operating area.

2. Pulse width limited by TJ max.

3. Starting TJ = 25 °C, ID = IAR, VDD = 50 V.

4. ISD ≤ 12 A, VDS (peak) < V(BR)DSS, VDD = 400 V.

5. VDS ≤ 480 V.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

1.14

°C/W

Rthj-pcb(1)

Thermal resistance junction-pcb

1. When mounted on an 1-inch² FR-4, 2 Oz copper board.

STD15N60DM6

Electrical ratings

DS13337 - Rev 1

page 2/17

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