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CS48N75 Datasheet(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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CS48N75 Datasheet(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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3 / 5 page ![]() www.doingter.cn — 3 — Trr Reverse Recovery Time 1 --- 33 --- NS Qrr Reverse Recovery Charge 1 --- 26 --- NC Notes: Typical Characteristics: (T C=25℃ unless otherwise noted) TJ=25℃,IF=75A di/dt=100A/μs 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, RG=25Ω, Starting TJ=25℃ Figure1. Output Characteristics Figure2. Transfer Characteristics VDS Drain-Source Voltage (V) VGS Gate-Source Voltage (V) Figure3. BVDSS vs Junction Temperature Figure4. ID vs Junction Temperature Temperature(℃) Temperature(℃) CS48N75 |
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