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CS72N18 Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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CS72N18 Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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2 / 5 page ![]() www.doingter.cn — 2 — RƟJA ** Thermal Resistance,Junction to Ambient 62.5 Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 100 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=80V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±30 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 --- 3 V RDS(ON) a Drain-Source On Resistance VGS=10V,ID=20A --- 5 6 mΩ VGS=4.5V,ID=10A --- 7 8 Dynamic Characteristics b Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 3390 --- pF Coss Output Capacitance --- 1940 --- Crss Reverse Transfer Capacitance --- 210 --- Switching Characteristics b td(on) Turn-On Delay Time VDS=80V, ID=20A, RGEN=3.3Ω --- 14 --- ns tr Rise Time --- 58 --- ns td(off) Turn-Off Delay Time --- 38 --- ns tf Fall Time --- 64 --- ns Qg Total Gate Charge VGS=10V, VDS=80V, ID=20A --- 59 --- nC Qgs Gate-Source Charge --- 11 --- nC Qgd Gate-Drain “Miller” Charge --- 15 --- nC Drain-Source Diode Characteristics ℃/W CS72N18 Electrical Characteristics:(T C=25℃ unless otherwise noted) |
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