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IRF640 Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # IRF640
Description  N-Channel MOSFET uses advanced trench technology
PDF  5 Pages
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

IRF640 Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Electrical Characteristics：(T
A=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
200
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=200V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
1
---
3
V
R
Drain-Source On Resistance
VGS=10V,ID=1A
---
120
165
Dynamic Characteristics
Rg
VDS=0V, VGS=0V, f=1MHz
---
6.5
----
Ω
Ciss
Input Capacitance
VDS=25V, VGS=0V, f=1MHz
---
800
---
pF
Coss
Output Capacitance
---
100
---
Crss
Reverse Transfer Capacitance
---
60
---
Switching Characteristics
td(on)
Turn-On Delay Time
VGS=10V ,VDS=100V,
RL=5.5Ω,RGEN=3Ω
---
8
---
ns
tr
Rise Time
---
10
---
ns
td(off)
Turn-Off Delay Time
---
30
---
ns
tf
Fall Time
---
4
---
ns
Qg
Total Gate Charge
VGS=10V, VDS=100V,
ID=18A
---
27
40
nC
Qgs
Gate-Source
Charge
---
7
---
nC
Qgd
Gate-Drain “Miller” Charge
---
3
---
nC
Drain-Source Diode Characteristics
Gate resistance
VGS=4.5V,ID=1A
---
150
180
RDS(ON)
mΩ
mΩ
IRF640



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