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MJE4353 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # MJE4353
Description  isc Silicon PNP Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJE4353 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc Website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
MJE4353
DESCRIPTION
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -160V(Min)
·
DC current gain -
: hFE = 15 (Min) @IC= -8 A
: hFE = 8 (Min) @IC= -16A
·
Complement to Type MJE4343
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
For use in high power audio amplifier and
switching regulator circuits
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current -Continuous
-16
A
IB
Base Current
-5
A
PC
Collector Power Dissipation
@TC=25℃
125
W
Tj
Junction Temperature
-65~150
℃
Tstg
Storage Temperature
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.0
℃
/W


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