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PDM1102H Datasheet(PDF) 1 Page - Nihon Inter Electronics Corporation

Part # PDM1102H
Description  MOSFET - 110A, 250V
PDF  3 Pages
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Manufacturer  NIEC [Nihon Inter Electronics Corporation]
Direct Link  http://www.niec.co.jp
Logo NIEC - Nihon Inter Electronics Corporation

PDM1102H Datasheet(HTML) 1 Page - Nihon Inter Electronics Corporation

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1
MOSFET
110A 250V
PDM1102H
P2HM1102H
耐 圧・クラス
Grade
項
目
Rating
記 号
Symbol
PDM1102H / P2HM1102H
単位
Unit
250
ドレイン・ソース間電圧
Drain-Source Voltage
VDSS
VGS=0V
V
ゲート・ソース間電圧
Gate-Source Voltage
VGSS
±20
V
Duty=50%
110（Ｔc=25℃）
ドレイン電流（連続）
Continuous Drain Current
D.C.
ID
80（Ｔc=25℃）
A
パルスドレイン電流
Pulsed Drain Current
IDM
220（Ｔc=25℃）
A
全損失
Total Power Dissipation
PD
420（Ｔc=25℃）
W
動作接合温度範囲
Operating Junction Temperature Range
Tjw
−40∼+150℃
℃
保存温度範囲
Storage Temperature Range
Tstg
−40∼+125℃
℃
2000
絶縁耐圧
RMS Isolation Voltage
Viso
端子 - ベース間,AC1 分間 Terminals to Base, AC 1 min .
V
3.0（本体取付 Module Base to Heat sink）
締付トルク
Mounting Torque
Ftor
2.0（ネジ端子部 Bus bar to Main Terminals）
N・m
PDM1102H
PDM1102H
PDM1102H
PDM1102H
P2HM110
P2HM110
P2HM110
P2HM1102H
2H
2H
2H
質量 Approximate Weight :220g
質量 Approximate Weight :220g
■最大定格
最大定格
最大定格
最大定格
Maximum Ratings
108.0
108.0


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