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FTK2612AD Datasheet(PDF) 2 Page - First Silicon Co., Ltd |
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FTK2612AD Datasheet(HTML) 2 Page - First Silicon Co., Ltd |
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2 / 5 page ![]() 20V N-Channel MOSFETs Static State Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 20 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.015 ---- V/℃ IDSS Drain-Source Leakage Current VDS=20V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=16V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±16V , VDS=0V --- --- ± 100 nA RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V , ID=10A --- 14 17 mΩ VGS=2.5V , ID=5A --- 18.5 24 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 0.5 0.8 1.2 V △ VGS(th) VGS(th) Temperature Coefficient --- -2.76 --- mV/℃ gfs Forward Transconductance VDS=5V , ID=5A --- 14 --- S Qg Total Gate Charge VDS=10V , VGS=4.5V , ID=5A --- 5.9 12 nC Qgs Gate-Source Charge --- 0.7 2 Qgd Gate-Drain Charge --- 1.8 4 Td(on) Turn-On Delay Time VDD=10V , VGS=4.5V , RG=3.3Ω ID=1A --- 4.8 10 ns Tr Rise Time --- 7.5 15 Td(off) Turn-Off Delay Time --- 16.5 32 Tf Fall Time --- 4.8 10 Ciss Input Capacitance VDS=10V , VGS=0V , F=1MHz --- 775 1440 pF Coss Output Capacitance --- 95 190 Crss Reverse Transfer Capacitance --- 58 120 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 2.2 --- Ω Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 30 A ISM Pulsed Source Current2 --- --- 60 A VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦300us , duty cycle ≦2%. 3. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain - Source Diode Characteristics Dynamic Characteristics FTK2612AD 2018. 04. 25 2/5 Revision No : 0 |
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