Electronic Components Datasheet Search
  English  ▼

X  

Preview PDF HTML

FTK2604DFN33 Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FTK2604DFN33
Description  20V N-Channel MOSFETs
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK2604DFN33 Datasheet(HTML) 2 Page - First Silicon Co., Ltd

  FTK2604DFN33 Datasheet HTML 1Page - First Silicon Co., Ltd FTK2604DFN33 Datasheet HTML 2Page - First Silicon Co., Ltd FTK2604DFN33 Datasheet HTML 3Page - First Silicon Co., Ltd FTK2604DFN33 Datasheet HTML 4Page - First Silicon Co., Ltd FTK2604DFN33 Datasheet HTML 5Page - First Silicon Co., Ltd  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
20V N-Channel MOSFETs
Static State Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
20
---
---
V
IDSS
Drain-Source Leakage Current
VDS=20V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=16V , VGS=0V , TJ=125℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=± 12V , VDS=0V
---
---
±
100
nA
RDS(ON)
Static Drain-Source On-Resistance2
VGS=4.5V , ID=15A
---
2.8
3.5
mΩ
VGS=2.5V , ID=10A
---
3.5
4.5
mΩ
VGS=1.8V , ID=6A
5
7
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
0.3
0.65
1
V
gfs
Forward Transconductance
VDS=5V , ID=5A
---
35
---
S
Qg
Total Gate Charge
VDS=10V , VGS=4.5V , ID=5A
---
52
100
nC
Qgs
Gate-Source Charge
---
6.6
12
Qgd
Gate-Drain Charge
---
13.8
28
Td(on)
Turn-On Delay Time
VDD=10V , VGS=4.5V , RG=3.3Ω
ID=1A
---
20.2
40
ns
Tr
Rise Time
---
31.2
60
Td(off)
Turn-Off Delay Time
---
68.5
120
Tf
Fall Time
---
21.2
42
Ciss
Input Capacitance
VDS=10V , VGS=0V , F=1MHz
---
3870
5500
pF
Coss
Output Capacitance
---
580
850
Crss
Reverse Transfer Capacitance
---
340
600
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
1.3
2.6
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
80
A
ISM
Pulsed Source Current2
---
---
160
A
VSD
Diode Forward Voltage2
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
trr
Reverse Recovery Time
VGS=0V,IS=1A , di/dt=100A/µs
TJ=25℃
---
---
---
ns
Qrr
Reverse Recovery Charge
---
---
---
nC
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3.
Essentially independent of operating temperature.
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Drain-Source Diode Characteristics
Dynamic Characteristics
2020. 05. 27
2/5
Revision No : 0
FTK2604DFN33



Html Pages

1 2 3 4 5


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com