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2SB779 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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2SB779 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
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1 / 2 page ![]() 1 Transistor 2SB779 Silicon PNP epitaxial planer type For low-frequency output amplification s Features q Low collector to emitter saturation voltage VCE(sat). q Satisfactory linearity of hFE at the low collector voltage. q Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. s Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Base JEDEC:TO–236 2:Emitter EIAJ:SC–59 3:Collector Mini Type Package 2.8 +0.2 –0.3 1.5 +0.25 –0.05 0.65 ±0.15 0.65 ±0.15 3 1 2 0.4 ±0.2 0.1 to 0.3 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –25 –20 –7 –1 – 0.5 200 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO ICEO VCBO VCEO VEBO hFE1 *1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = –25V, IE = 0 VCE = –20V, IB = 0 IC = –10µA, IE = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0 VCE = –2V, IC = –0.5A *2 VCE = –2V, IC = –1A *2 IC = –500mA, IB = –50mA *2 IC = –500mA, IB = –50mA *2 VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz min –25 –20 –7 90 25 typ – 0.2 150 15 max –100 –1 220 – 0.4 –1.2 Unit nA µA V V V V V MHz pF *h FE1 Rank classification Rank Q R hFE1 90 ~ 155 130 ~ 220 Marking Symbol 1AQ 1AR Marking symbol : 1A *2 Pulse measurement |
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