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FTK10N80P Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FTK10N80P
Description  10.0 Amps, 800 Volts N-Channel MO S-FET
PDF  7 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK10N80P Datasheet(HTML) 2 Page - First Silicon Co., Ltd

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ABSOLUTE MAXIMUM RATINGS (TC = 25˚C, unless otherwise specified)
PARAMET
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
800
V
VDSS
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 1)
IAR
10
A
TC = 25°C
10
A
Continuous Drain Current
TC = 100°C
ID
6.0
Pulsed Drain Current (Note 1)
IDM
36
A
Single Pulse(Note 2)
EAS
920
mJ
Avalanche Energy
Repetitive Limited by TJ(MAX)
EAR
17
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
TC = 25°C
142 / 65
W
Power Dissipation (TO-220,TO-263/ TO-220F)
Derate above 25°C
PD
1.14 / 0.38
W / ˚C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
UNIT
62.5
Junction-to-Ambient
θJA
0.88
Junction-to-Case
TO-220, TO-263
θJc
˚C / W
ELECTRICAL CHARACTERISTICS
(TC = 25˚C , unless Otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
UNIT
OFF CHARACTERISTICS
800
V
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
VDS = 800V, VGS = 0V
10
µ
A
Drain-Source Leakage Current
IDSS
Forward
VGS = 30V, VDS = 0V
100
nA
Gate-Body Leakage Current
Reverse
IGSSF
VGS = -30V, VDS = 0V
-100
nA
Breakdown Voltage Temperature Coefficient ΔBVDSS / ΔTJ ID = 250
µ
A, Referenced to
25°C
0.99
V / ˚C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250µA
2.0
4.0
V
Static Drain-Source On-Resistance
RDS(ON)
VGS = 10V, ID =5.0A
1.15
Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
2800
pF
Output Capacitance
COSS
230
pF
Reverse Transfer Capacitance
CRSS
VDS = 25V, VGS = 0V,
f = 1.0MHz
20
pF
2016. 07. 05
2/7
Revision No : 0
Junction Temperature
TJ
+150
˚C
TSTG
-55 ~ +150
˚C
MAX
Operating and Storage Temperature
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD =400V,ID = 9.4A, RG = 25Ω
(Note 4,5)
ns
Turn-On Rise Time
tR
150
ns
Turn-Off Fall Time
tF
120
ns
Total Gate Charge
QG
58
nC
Gate-Source Charge
QGS
VDS = 640V,ID =9.4A,VGS = 10V
(Note 4,5)
17.5
nC
Turn-Off Delay Time
Gate-Drain Charge
QGD
22
nC
tD(OFF)
MIN
TYP
MAX
Forward Transconductance
gFS
VDS = 40V, ID = 3.5A (Note 4)
5.5
S
IGSSR
60
120
ns
TO-220F
1.93
θJc
FTK10N80P/F/DD
0.92



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