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FTK50N06F Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FTK50N06F
Description  50 Amps, 60 Volts N-CHANNEL POWER MOSFET
PDF  7 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK50N06F Datasheet(HTML) 2 Page - First Silicon Co., Ltd

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Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(TC = 25˚C, unless otherwise specified)
PARAMET
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
60
V
VDSS
Gate-Source Voltage
VGSS
±20
V
TC = 25°C
50
A
Continuous Drain Current
TC = 100°C
ID
35
Pulsed Drain Current (Note 1)
IDM
200
A
Single Pulse (Note 2)
EAS
490
mJ
Avalanche Energy
Repetitive (Note 1)
EAR
12
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
7
V/ns
TC = 25°C
130
W
Power Dissipation
Derate above 25°C
PD
0.9
W / ˚C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
UNIT
62
Junction-to-Ambient
θJA
1.78
Junction-to-Case
θJC
˚C / W
ELECTRICAL CHARACTERISTICS
(TC = 25˚C , unless Otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
UNIT
OFF CHARACTERISTICS
60
V
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
1
µ
A
Drain-Source Leakage Current
IDSS
VDS = 48V, TC = 125°C
10
µ
A
Forward
VGS = 20V, VDS = 0V
100
nA
Gate-Body Leakage Current
Reverse
IGSSF
VGS = -20V, VDS = 0V
-100
nA
Breakdown Voltage Temperature Coefficient
ΔBVDSS / ΔTJ ID = 250µA,
Referenced to 25°C
0.06
V / ˚C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250µA
2.0
4.0
V
Static Drain-Source On-Resistance
RDS(ON)
VGS = 10V, ID = 25A
18
22
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
1000
pF
Output Capacitance
COSS
450
pF
Reverse Transfer Capacitance
CRSS
VDS = 25V, VGS = 0V,
f = 1.0MHz
70
pF
2007. 12. 18
2/7
FTK50N06P / F
Revision No : 0
Junction Temperature
TJ
+150
˚C
TSTG
-55 ~ +150
˚C
MAX
Operating and Storage Temperature
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
VDD = 30V, ID = 25A, RG = 25Ω
(Note 4,5)
ns
Turn-On Rise Time
tR
120
ns
Turn-Off Fall Time
tF
85
ns
Total Gate Charge
QG
30
nC
Gate-Source Charge
QGS
VDS = 48V,ID = 50A, VGS = 10V
(Note 4,5)
8
nC
Turn-Off Delay Time
Gate-Drain Charge
QGD
10
nC
tD(OFF)
RATING
IGSSR
25
80
ns
A
62
1.24
TO-220
TO-220F
TO-220
TO-220F
1300
590
90
240
170
40
50
160



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