FTK50P03PDFN56 datasheet(2/5 Pages) FS

2 / 5 page

2015. 7. 18

2/5

Revision No : 0

ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)

FTK50P03PDFN56

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Off characteristics

Drain-source breakdown voltage

V(BR) DSS

VGS = 0V, ID =-250µA

-30

Zero gate voltage drain current

IDSS

VDS =-30V, VGS =0V

-1

µA

Gate-body leakage current

IGSS

VDS =0V, VGS =±20V

±100

On characteristics (note1)

Gate-threshold voltage

VGS(th)

VDS =VGS, ID =-250µA

-1.0

-1.5

-2.5

Static drain-source on-sate resistance

RDS(on)

VGS =-10V, ID =-10A

4.4

mΩ

Forward transconductance

gFS

VDS =-10V, ID =-15A

Dynamic characteristics (note 2)

Input capacitance

Ciss

3590

Output capacitance

Coss

695

Reverse transfer capacitance

Crss

VDS =-15V,VGS =0V,

f =1MHz

665

Switching characteristics (note 2)

Total gate charge

Gate-source charge

Qgs

11.7

Gate-drain charge

Qgd

VDS=-15V, VGS=-10V,

ID=-10A

Turn-on delay time

td(on)

Turn-on rise time

Turn-off delay time

td(off)

Turn-off fall time

VDD=-15V,ID=-10A,

VGS=-10V,RG=6Ω

Drain-Source Diode Characteristics

Drain-source diode forward voltage

(note1)

VSD

VGS =0V, IS=-10A

-0.85

-1.2

Continuous drain-source diode forward

current

(note3)

-50

Pulsed drain-source diode forward current

ISM

-70

Notes:

Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.

Guaranteed by design, not subject to production.

Surface Mounted on FR4 Board, t≤ 10 sec.

FTK50P03PDFN56 Datasheet(PDF) 2 Page - First Silicon Co., Ltd

FTK50P03PDFN56 Datasheet(HTML) 2 Page - First Silicon Co., Ltd

Html Pages

1 2 3 4 5

Datasheet Download

Link URL