FTK55P05S datasheet(2/6 Pages) FS

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Thermal Characteristic

Thermal Resistance ,Junction-to-Ambient(Note 2)

RθJA

℃

Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=-250μA

-55

Zero Gate Voltage Drain Current

IDSS

VDS=-55V,VGS=0V

μA

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

±100

On Characteristics (Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250μA

-1.5

-2.6

-3.5

Drain-Source On-State Resistance

RDS(ON)

VGS=-10V, ID=-5A

mΩ

Forward Transconductance

gFS

VDS=-15V,ID=-5A

Dynamic Characteristics (Note4)

Input Capacitance

Clss

1450

Output Capacitance

Coss

145

Reverse Transfer Capacitance

Crss

VDS=-20V,VGS=0V,

F=1.0MHz

110

Switching Characteristics (Note 4)

Turn-on Delay Time

td(on)

Turn-on Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDD=-30V, ,RL=30Ω

VGS=-10V,RGEN=6Ω

Total Gate Charge

Gate-Source Charge

Qgs

4.5

Gate-Drain Charge

Qgd

VDS=-30V,ID=-5A,

VGS=-10V

Drain-Source Diode Characteristics

Diode Forward Voltage (Note 3)

VSD

VGS=0V,IS=-3A

1.2

Diode Forward Current (Note 2)

-5

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

FTK55P05S

2018. 02. 06

2/6

Revision No : 0

FTK55P05S Datasheet(PDF) 2 Page - First Silicon Co., Ltd

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