2015. 10. 26

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SEMICONDUCTOR

TECHNICAL DATA

FTK55P30F

Revision No : 0

FTK55P30F

P-Channel Power MOSFET

DESCRIPTION

The FTK55P30F uses advanced trench technology and design to

This device is well suited for high current load applications.

High density cell design for ultra low

Fully characterized Avalanche voltage and current

Excellent package for good heat dissipation

APPLICATIONS

Power switching application

Hard switched and high frequency circuits

Uninterruptible Power Supply

EQUIVALENT CIRCUIT

Excellent package for good heat dissipation

MARKING

CJPF55P30= Part No.

XXX=Date Code

unless otherwise noted )

Paramete

l

o

b

m

y

S

r

Limit

Unit

Drain-Source Voltage

-55

V

Gate-Source Voltage

±20

V

Continuous Drain Current

-30

A

Pulsed Drain Current

-120

A

Single Pulsed Avalanche Energy

(1)

225

mJ

Power Dissipation

2

W

Thermal Resistance from Junction to Ambient

62.5

℃/W

Junction Temperature

150

℃

Storage Temperature Range

-55~+150

℃

Lead Temperature for Soldering Purposes(1/8’’ from case for 10s

T

L

260

℃

TO-220F

A

A

B

C

C

D

D

E

E

F

G

H

H

1.52 MAX

1.52 MAX

J

K

L

M

L

N

N

N

O

Q

R

R

1

2

3

M

DIM

MILLIMETERS

10.16

0.20

+

_

15.00

0.20

+

_

3.00

0.20

+

_

0.625±0.125

3.50 typ

0.45

0.1

+

_

3.80

0.2

+

_

13.20

0.20

+

_

2.54

0.2

+

_

4.50

0.2

+

_

6.36

0.3

+

_

2.70

0.20

+

_

2.7 typ

16.80

0.4

+

_

1. GATE

2. DRAIN

3. SOURCE