dv/dt

50

V/ns

dv/dt

15

V/ns

Operating Junction and Storage Temperature Range

-55...+150

°C

Table 2. Thermal Characteristic

Parameter

Symbol

Value

Unit

Thermal Resistance，Junction-to-Case（Maximum）

1.81

°C /W

Thermal Resistance，Junction-to-Ambient （Maximum）

62

°C /W

Table 3. Electrical Characteristics (TA=25°C unless otherwise noted)

Parameter

Symbol

Condition

Min Typ Max

Unit

On/off states

Drain-Source Breakdown Voltage

650

V

Zero Gate Voltage Drain Current(Tc=25°C)

1

μA

Zero Gate Voltage Drain Current(Tc=125°C)

100

μA

Gate-Body Leakage Current

±100

nA

Gate Threshold Voltage

3

4

V

Drain-Source On-State Resistance

460

540

mΩ

Dynamic Characteristics

Input Capacitance

F=1.0MHz

590

pF

Output Capacitance

37

pF

Reverse Transfer Capacitance

0.9

pF

Total Gate Charge

14.6

22

nC

Gate-Source Charge

4

nC

Gate-Drain Charge

6.7

nC

S

witching times

Turn-on Delay Time

8

nS

Turn-on Rise Time

6

nS

Turn-Off Delay Time

59

75

nS

Turn-Off Fall Time

10

15

nS

Source- Drain Diode Characteristics

Source-drain current(Body Diode)

8

A

Pulsed Source-drain current(Body Diode)

32

A

Forward On Voltage

0.9

1.2

V

Reverse Recovery Time

230

nS

Reverse Recovery Charge

1.2

uC

Peak Reverse Recovery Current

10.5

A

2018. 05. 21

2/7

Revision No : 0

FTK65T540I/K