Parameter

Symbol

Unit

dv/dt

50

V/ns

dv/dt

15

V/ns

Operating Junction and Storage Temperature Range

-55...+150

°C

* limited by maximum junction temperature

Table 2. Thermal Characteristic

Parameter

Symbol

Unit

Thermal Resistance Junction-to-Case (Maximum）

，

2.08

3.98

°C /W

Thermal Resistance, Junction-to-Ambient (Maximum)

62

80

°C /W

Table 3. Electrical Characteristics (TA=25°C unless otherwise noted)

Parameter

Symbol

Condition

Min Typ Max

Unit

On/off states

Drain-Source Breakdown Voltage

650

V

Zero Gate Voltage Drain Current(Tc=25°C)

1

μA

Zero Gate Voltage Drain Current(Tc=125°C)

100

μA

Gate-Body Leakage Current

±100

nA

Gate Threshold Voltage

3

4

V

Drain-Source On-State Resistance

600

680

mΩ

Dynamic Characteristics

Input Capacitance

F=1.0MHz

435

pF

Output Capacitance

28

pF

Reverse Transfer Capacitance

3.3

pF

Total Gate Charge

11

nC

Gate-Source Charge

3.5

nC

Gate-Drain Charge

5

nC

Switching times

Turn-on Delay Time

8

nS

Turn-on Rise Time

7

nS

Turn-Off Delay Time

58

75

nS

Turn-Off Fall Time

9

15

nS

Source- Drain Diode Characteristics

Source-drain current(Body Diode)

7

A

Pulsed Source-drain current(Body Diode)

28

A

Forward On Voltage

0.9

1.2

V

Reverse Recovery Time

210

nS

Reverse Recovery Charge

0.85

uC

Peak Reverse Recovery Current

8

A

Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature

FTK65T680DD FTK65T680F

FTK65T680P

FTK65T680DD FTK65T680F

FTK65T680P

2019. 04. 02

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Revision No : 0

FTK65T680DD/P/F