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FTK3094D Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FTK3094D
Description  30V N-Channel MOSFETs
PDF  5 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK3094D Datasheet(HTML) 2 Page - First Silicon Co., Ltd

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30V N-Channel MOSFETs
Static State Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
30
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.03
---
V/℃
IDSS
Drain-Source Leakage Current
VDS=30V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=24V , VGS=0V , TJ=125℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=± 20V , VDS=0V
---
---
±
100
nA
RDS(ON)
Static Drain-Source On-Resistance3
VGS=10V , ID=24A
---
3.1
4
mΩ
VGS=4.5V , ID=12A
---
4.5
6
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.2
1.6
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-5
---
mV/℃
gfs
Forward Transconductance
VDS=10V , ID=10A
---
15.5
---
S
Qg
Total Gate Charge3 , 4
VDS=15V , VGS=4.5V , ID=24A
---
24
36
nC
Qgs
Gate-Source Charge3 , 4
---
4.2
8
Qgd
Gate-Drain Charge3 , 4
---
13
20
Td(on)
Turn-On Delay Time3 , 4
VDD=15V , VGS=10V , RG=3.3Ω
ID=15A
---
12.6
24
ns
Tr
Rise Time3 , 4
---
19.5
37
Td(off)
Turn-Off Delay Time3 , 4
---
42.8
81
Tf
Fall Time3 , 4
---
13.2
25
Ciss
Input Capacitance
VDS=25V , VGS=0V , F=1MHz
---
2200
3300
pF
Coss
Output Capacitance
---
280
410
Crss
Reverse Transfer Capacitance
---
177
260
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
2
4
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
VDD=25V, L=0.1mH, IAS=24A
31
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
90
A
ISM
Pulsed Source Current3
---
---
180
A
VSD
Diode Forward Voltage3
VGS=0V , IS=1A , TJ=25℃
---
0.7
1
V
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=25V,VGS=10V,L=0.1mH,IAS=50A.,RG=25Ω, Starting TJ=25℃.
3.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.
Essentially independent of operating temperature.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Drain-Source Diode Characteristics
Dynamic Characteristics
Guaranteed Avalanche Energy
FTK3094D
2018. 10. 30
2/5
Revision No : 0



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