DESCRIPTION

D

G

S

The FTK3341 uses advanced trench technology to

with gate voltages as low as 2.5V. This device is suitable

for use as a load switch or in PWM applications.

GENERAL FEATURES

Schematic diagram

● V

= -30V,I

PACKAGE MARKING AND ORDERING INFORMATION

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

R1

FTK3341

SOT-23

Ø180mm

8 mm

3000 units

ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

-30

V

Gate-Source Voltage

±12

V

-4.2

A

-3.5

A

Drain Current-Continuous@ Current-Pulsed (Note 1)

-30

A

Maximum Power Dissipation

1

W

Operating Junction and Storage Temperature Range

-55 To 150

℃

THERMAL CHARACTERISTICS

Thermal Resistance,Junction-to-Ambient (Note 2)

90

/W

℃

ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

μA

-30

V

Zero Gate Voltage Drain Current

-1

μA

Gate-Body Leakage Current

±100

nA

DS

< 120m

Ω @ V

< 65m

Ω @ V

< 50m

Ω @ V

● High Power and current handing capability

● Lead free product is acquired

● Surface Mount Package

Marking and pin Assignment

Application

●PWM applications

●Load switch

●Power management

SOT-23 top view

FTK3341

SEMICONDUCTOR

TECHNICAL DATA

2013. 12. 14

1/6

Revision No : 0

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