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FTK3407 Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FTK3407
Description  30V P-Channel Enhancement-Mode MOSFET
PDF  6 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK3407 Datasheet(HTML) 2 Page - First Silicon Co., Ltd

  FTK3407 Datasheet HTML 1Page - First Silicon Co., Ltd FTK3407 Datasheet HTML 2Page - First Silicon Co., Ltd FTK3407 Datasheet HTML 3Page - First Silicon Co., Ltd FTK3407 Datasheet HTML 4Page - First Silicon Co., Ltd FTK3407 Datasheet HTML 5Page - First Silicon Co., Ltd FTK3407 Datasheet HTML 6Page - First Silicon Co., Ltd  
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ELECTRICAL CHARACTERISTICS (TA = 25
oC unless otherwise noted)
Symbol
Min
Typ
Max
Units
BVDSS
V
0
3
-
VDS=-24V, VGS=0V
-1
TJ=55°C
-5
IGSS
±100
nA
VGS(th)
Gate Threshold Voltage
-1
-2
-3
V
ID(ON)
A
5
2
-
70
TJ=125°C
95
100
mΩ
gFS
10
S
VSD
-0.7
-1
V
IS
-2
A
Ciss
415
520
625
pF
Coss
70
100
130
pF
Crss
40
65
90
pF
Rg
3.5
7.5
11.5
Ω
Qg(10V)
7.4
9.2
11
nC
Qg(4.5V)
3.7
4.6
6
nC
Qgs
1.3
1.6
1.9
nC
Qgd
1.3
2.2
3.1
nC
tD(on)
7.5
ns
tr
5.5
ns
tD(off)
19
ns
tf
7
ns
trr
8.8
11
13
ns
Qrr
4
5.3
6.4
nC
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
ID=-250µA, VGS=0V
VGS=-10V, VDS=-5V
VGS=-10V, ID=-4.1A
Reverse Transfer Capacitance
IF=-4A, dI/dt=100A/µs
VGS=0V, VDS=-15V, f=1MHz
SWITCHING PARAMETERS
STATIC PARAMETERS
Parameter
Conditions
IDSS
µ
A
VDS=VGS ID=-250µA
VDS=0V, VGS= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Forward Transconductance
Diode Forward Voltage
RDS(ON)
Static Drain-Source On-Resistance
mΩ
IS=-1A,VGS=0V
VDS=-5V, ID=-4A
VGS=-4.5V, ID=-3A
V
e
c
n
a
t
s
i
s
e
r
e
t
a
G
GS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
VGS=-10V, VDS=-15V, ID=-4A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=3.6Ω,
RGEN=3Ω
2018. 06. 27
2/6
Revision No : 1
FTK3407



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