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FTK3810 Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FTK3810
Description  30V Dual N-Channel MOSFETs
PDF  5 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK3810 Datasheet(HTML) 2 Page - First Silicon Co., Ltd

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2017. 10. 28
2/5
FTK3810
Revision No : 0
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Off Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
30
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.04
---
V/℃
IDSS
Drain-Source Leakage Current
VDS=30V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=30V , VGS=0V , TJ=125℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=± 20V , VDS=0V
---
---
±
100
nA
On Characteristics
RDS(ON)
Static Drain-Source On-Resistance3
VGS=10V , ID=8A
---
10
13
mΩ
VGS=4.5V , ID=4A
---
14
18
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.2
1.8
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-4
---
mV/℃
gfs
Forward Transconductance
VDS=10V , ID=3A
---
6
---
S
Dynamic and switching Characteristics
Qg
Total Gate Charge3 , 4
VDS=15V , VGS=4.5V , ID=5A
---
7.4
12
nC
Qgs
Gate-Source Charge3 , 4
---
2.3
5
Qgd
Gate-Drain Charge3 , 4
---
3
6
Td(on)
Turn-On Delay Time3 , 4
VDD=15V , VGS=10V , RG=6Ω
ID=1A
---
3.8
7
ns
Tr
Rise Time3 , 4
---
10
19
Td(off)
Turn-Off Delay Time3 , 4
---
22
42
Tf
Fall Time3 , 4
---
6.6
13
Ciss
Input Capacitance
VDS=25V , VGS=0V , F=1MHz
---
620
900
pF
Coss
Output Capacitance
---
85
125
Crss
Reverse Transfer Capacitance
---
60
90
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
---
2.8
5.6
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
10
A
ISM
Pulsed Source Current3
---
---
40
A
VSD
Diode Forward Voltage3
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
trr
Reverse Recovery Time
VGS=0V,IS=1A , di/dt=100A/µs
TJ=25℃
---
---
---
ns
Qrr
Reverse Recovery Charge
---
---
---
nC
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=25V,VGS=10V,L=0.1mH,IAS=16A.,RG=25 , Starting TJ=25℃.
3.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.
Essentially independent of operating temperature.
Drain-Source Diode Characteristics and Maximum Ratings



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