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FTK3908 Datasheet(PDF) 2 Page - First Silicon Co., Ltd |
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FTK3908 Datasheet(HTML) 2 Page - First Silicon Co., Ltd |
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2 / 5 page ![]() 2017. 10. 28 2/5 FTK3908 Revision No : 0 Electrical Characteristics (TJ=25℃, unless otherwise noted) Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.04 --- V/℃ IDSS Drain-Source Leakage Current VDS=30V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=± 20V , VDS=0V --- --- ± 100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=10A --- 8.5 10 mΩ VGS=4.5V , ID=5A --- 12.5 15 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.6 2.5 V △ VGS(th) VGS(th) Temperature Coefficient --- -4 --- mV/℃ gfs Forward Transconductance VDS=10V , ID=10A --- 18 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=15V , VGS=4.5V , ID=10A --- 7.5 15 nC Qgs Gate-Source Charge2 , 3 --- 1.3 3 Qgd Gate-Drain Charge2 , 3 --- 4.5 9 Td(on) Turn-On Delay Time2 , 3 VDD=15V , VGS=10V , RG=3.3Ω ID=15A --- 4.8 9 ns Tr Rise Time2 , 3 --- 12.5 25 Td(off) Turn-Off Delay Time2 , 3 --- 27.6 50 Tf Fall Time2 , 3 --- 8.2 16 Ciss Input Capacitance VDS=25V , VGS=0V , F=1MHz --- 750 1350 pF Coss Output Capacitance --- 150 300 Crss Reverse Transfer Capacitance --- 110 200 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 2.7 4.5 Ω Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 15 A ISM Pulsed Source Current --- --- 30 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Drain-Source Diode Characteristics and Maximum Ratings |
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