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FTK3908Z Datasheet(PDF) 2 Page - First Silicon Co., Ltd

Part # FTK3908Z
Description  Improved dv/dt capability
PDF  5 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK3908Z Datasheet(HTML) 2 Page - First Silicon Co., Ltd

  FTK3908Z Datasheet HTML 1Page - First Silicon Co., Ltd FTK3908Z Datasheet HTML 2Page - First Silicon Co., Ltd FTK3908Z Datasheet HTML 3Page - First Silicon Co., Ltd FTK3908Z Datasheet HTML 4Page - First Silicon Co., Ltd FTK3908Z Datasheet HTML 5Page - First Silicon Co., Ltd  
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2017.5. 10
2/5
FTK3908Z
Revision No : 0
Electrical Characteristics (TJ=25℃)
Static State Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
30
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.04
---
V/℃
IDSS
Drain-Source Leakage Current
VDS=30V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=24V , VGS=0V , TJ=125℃
---
---
10
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
RDS(ON)
Static Drain-Source On-Resistance3
VGS=10V , ID=16A
---
6.2
8.5
mΩ
VGS=4.5V , ID=8A
---
9
13
mΩ
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
1.2
1.6
2.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-4
---
mV/℃
gfs
Forward Transconductance
VDS=10V , ID=8A
---
9.5
---
S
Qg
Total Gate Charge3 , 4
VDS=15V , VGS=4.5V , ID=20A
---
7.5
12
nC
Qgs
Gate-Source Charge3 , 4
---
1.3
2.6
Qgd
Gate-Drain Charge3 , 4
---
4.5
8
Td(on)
Turn-On Delay Time3 , 4
VDD=15V , VGS=10V , RG=3.3Ω
ID=15A
---
4.8
9
ns
Tr
Rise Time3 , 4
---
12.5
24
Td(off)
Turn-Off Delay Time3 , 4
---
27.6
52
Tf
Fall Time3 , 4
---
8.2
16
Ciss
Input Capacitance
VDS=25V , VGS=0V , F=1MHz
---
680
1000
pF
Coss
Output Capacitance
---
150
220
Crss
Reverse Transfer Capacitance
---
70
105
Rg
Gate resistance
VGS=0V, VDS=0V, F=1MHz
---
2.7
5.4
Ω
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
VDD=25V, L=0.1mH, IAS=15A
12
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
VG=VD=0V , Force Current
---
---
48
A
ISM
Pulsed Source Current3
---
---
192
A
VSD
Diode Forward Voltage3
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
trr
Reverse Recovery Time
VGS=0V,IS=1A , di/dt=100A/µs
TJ=25℃
---
---
---
ns
Qrr
Reverse Recovery Charge
---
---
---
nC
Drain-Source Diode Characteristics
Dynamic Characteristics
Guaranteed Avalanche Energy
Note :
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
VDD=25V,VGS=10V,L=0.1mH,IAS=30A.,RG=25Ω,Starting TJ=25℃.
3.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
4.
Essentially independent of operating temperature.



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