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LTC2913 Datasheet(PDF) 15 Page - Analog Devices

Part # LTC2913
Description  Surge Stopper with Fault Latchoff
PDF  24 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

LTC2913 Datasheet(HTML) 15 Page - Analog Devices

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LT4356-3
15
Rev D
For more information www.analog.com
APPLICATIONS INFORMATION
Shutdown
The LT4356-3 can be shut down to a low current mode
whenthevoltageattheSHDNpingoesbelowtheshutdown
threshold of 0.4V. The quiescent current drops to 7µA. All
functions are turned off including the auxiliary amplifier.
After the GATE pin pulls low due to a fault time out, the
LT4356-3 latches off. Allow sufficient time for the TMR
pin to discharge to 0.5V (typical discharge current is
2.2µA) and for the MOSFET to cool before attempting to
reset the part. To reset, pull the SHDN pin low for at least
100µs, then pull high with a slew rate of at least 10V/ms.
The SHDN pin can be pulled up to VCC or below GND by
up to 60V without damaging the pin. Leaving the pin open
allows an internal current source to pull it up and turn
on the part while clamping the pin to 2.5V. The leakage
current at the pin should be limited to no more than 1µA
if no pull up device is used to help turn it on.
Supply Transient Protection
The LT4356-3 is 100% tested and guaranteed to be safe
fromdamagewithsupplyvoltagesupto80V.Nevertheless,
voltagetransientsabove100Vmaycausepermanentdam-
age. During a short-circuit condition, the large change in
currentflowingthroughpowersupplytracesandassociated
wiring can cause inductive voltage transients which could
exceed100V.Tominimizethevoltagetransients,thepower
trace parasitic inductance should be minimized by using
wide traces. A small surge suppressor, D2, in Figure 9,
at the input will clamp the voltage spikes.
A total bulk capacitance of at least 22µF low ESR is re-
quired close to the source pin of MOSFET Q1. In addition,
the bulk capacitance should be at least 10 times larger
than the total ceramic bypassing capacitor on the input
of the DC/DC converter.
Figure 8. Overvoltage Regulator with P-Channel MOSFET
Reverse Input Protection
CTMR
0.1µF
RSNS
10m
M1
IRLR2908
M2
Si4435
VIN
12V
VOUT
12V, 3A
CLAMPED
AT 16V
43563 F08
LT4356DE-3
GND
TMR
10
1
OUT
SNS
3
5
SHDN
7
AOUT
11
IN+
12
VCC
6
EN
FLT
FB
9
8
2
R2
4.99k
R1
59k
GATE
4
R6
10k
D1
1N5245
15V
R3
10
D2*
SMAJ58CA
*DIODES INC.
CTMR
47nF
*SANYO 25CE22GA
R3
10
RSNS
10m
M1
IRLR2908
D2
SMAJ58A
VIN
43563 F09
LT4356DE-3
GND
TMR
OUT
GATE
SNS
IN+
SHDN
AOUT
FAULT
EN
FLT
UNDERVOLTAGE
FB
CL*
22µF
DC-DC
CONVERTER
GND
SHDN
VCC
R2
4.99k
R4
383k
R5
100k
R1
59k
10
1
3
4
5
7
12
VCC
6
11
2
9
8
Figure 9. Overvoltage Regulator with Low-Battery Detection



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