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Die Size

(Excluding Saw Street)

350 x 350

13.78 x 13.78

µm

mils

Base Pad Size

102.5 x 102.5

4.02 x 4.02

Emitter Pad Size

96 x 96

5.51 x 5.51

µm

mils

Die Thickness

230 (±15)

9.06 (±0.59)

µm

mils

Top Metal Composition

Al - 1.3µm

Back Metal Composition

AuAs - 0.9µm

NPN Transistor Bare Die - BC107B

General purpose medium power amplifier or switch in bare die form

Complement to PNP BC307B



Low saturation voltage



Well suited for amplifier applications



High reliability gold back metal



High reliability tested grades for Military + Space

Rev 1.0

08/01/19

Features:

Die Dimensions in µm (mils)

350 (13.78)

102.5

(4.02)

E = EMITTER B = BASE

DIE BACK = COLLECTOR

Ordering Information:

Supply Formats:

Mechanical Specification



Default – Die in Waffle Pack (400 per tray capacity)



Sawn Wafer on Tape – Specific request



Unsawn Wafer – Specific request



With additional electrical selection – Specific request



Sawn as pairs or adjacent pair pick – Specific request

140

(5.51)

B

The following part suffixes apply:



No suffix - MIL-STD-750 /2072 Visual Inspection



“H” - MIL-STD-750 /2072 Visual Inspection

+ MIL-STD-38534 Class H LAT



“K” - MIL-STD-750 /2072 Visual Inspection

+ MIL-STD-38534 Class K LAT

LAT = Lot Acceptance Test.

For further information on LAT process flows see below.

www.siliconsupplies.com\quality\bare-die-lot-qualification

B

E