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HER2002PL Datasheet(PDF) 1 Page - Thinki Semiconductor Co., Ltd.

Part # HER2002PL
Description  20.0 Ampere Heatsink Dual Series Connection High Efficiency Rectifiers
PDF  2 Pages
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Manufacturer  THINKISEMI [Thinki Semiconductor Co., Ltd.]
Direct Link  http://www.thinkisemi.com
Logo THINKISEMI - Thinki Semiconductor Co., Ltd.

HER2002PL Datasheet(HTML) 1 Page - Thinki Semiconductor Co., Ltd.

  HER2002PL Datasheet HTML 1Page - Thinki Semiconductor Co., Ltd. HER2002PL Datasheet HTML 2Page - Thinki Semiconductor Co., Ltd.  
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Features
TO-247AD/TO-3P
Unit:inch(mm)
※
ThinkiSemi latest&matured process FRD/FRED
※
Low forward voltage drop
※
High current capability
※
Low reverse leakage current
※
Low reverse leakage current
※
High surge current capability
Application
※
Automotive Inverters and Solar Inverters
※
Car Audio Amplifiers and Sound Device Systems
※
Plating Power Supply,Motor Control,UPS and SMPS etc.
Mechanical Data
※
Case: Heatsink TO-247AD/TO-3P Package Outline
※
Epoxy: UL 94V-0rateflame retardant
※
Epoxy: UL 94V 0 rate flame retardant
※
Terminals: Solderable per MIL-STD-202 method 208
※
Polarity: As marked on diode body
※
Mounting position: Any
※
Weight: 6.0 gram approximately
HER2002PL thru HER2012PL
Pb Free Plating Product
HER2002PL thru HER2012PL
Pb
20.0 Ampere Heatsink Dual Series Connection High Efficiency Rectifiers
Positive
Negative
Common Cathode
Case
Case
Common Anode
Doubler
Case
Tandem Polarity
Case
Series
Tandem Polarity
Suffix "PA"
Suffix "PR"
Suffix "PL"
Suffix "PT"
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
Page 1/2
Rev.11T
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
UNIT
VRRM
200
400
600
800
1000
1200
V
VRMS
140
280
420
560
700
840
V
VDC
200
400
600
800
1000
1200
V
IF(AV)
A
IFSM
A
VF
(Typical)
IR
μA
μA
Trr
nS
CJ
pF
RθJC
℃
/W
TJ,TSTG
℃
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Note:(3)Thermal Resistance junction to case.
Typical Junction Capacitance (Note 2)
100
Typical Thermal Resistance (Note 3)
0.75
Operating Junction and Storage
Temperature Range
-55 to +175
Maximum Reverse Recovery Time (Note1)
PARAMETER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=125℃
(Total Device 2x10.0A=20.0A)
20.0
Peak Forward Surge Current, 8.3ms single Half
sine-wave superimposed on rated load (JEDEC
method)(Per Diode/Per Leg)
200
Maximum Instantaneous Forward Voltage
@10.0A(Per Diode/Per Leg)
Maximum DC Reverse Current @TJ=25℃
At Rated DC Blocking Voltage @TJ=125℃
1.0
100
1.30-1.70
HER2003PL
HER2004PL
HER2002PL
HER2006PL
HER2008PL
HER2010PL
HER2012PL
0.85-1.00
1.00-1.30
1.30-1.70
V
35-50
50-75
.199(5.05)
.142(3.6)
.126(3.2)
.030(0.75)
.050(1.25)
.225(5.7)
.225(5.7)
.640(16.25)
.175(4.45)
.125(3.2)
.110(2.8)
.017(0.45)
.045(1.15)
.204(5.2)
.204(5.2)
.095(2.4)
.620(15.75)


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