2SB970 datasheet(1/2 Pages) PANASONIC

Part #	2SB970

Description	Silicon PNP epitaxial planer type(For low-voltage output amplification)

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Manufacturer	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

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1

Transistor

2SB970

Silicon PNP epitaxial planer type

For low-voltage output amplification

s Features

q

Low collector to emitter saturation voltage VCE(sat).

q

Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

s Absolute Maximum Ratings (Ta=25˚C)

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Base

JEDEC:TO–236

2:Emitter

EIAJ:SC–59

3:Collector

Mini Type Package

2.8

+0.2

–0.3

1.5

+0.25

–0.05

0.65

±0.15

0.65

±0.15

3

1

2

0.4

±0.2

0.1 to 0.3

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

Tj

Tstg

Ratings

–15

–10

–7

–1

– 0.5

200

150

–55 ~ +150

Unit

V

A

mW

˚C

s Electrical Characteristics (Ta=25˚C)

Parameter

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

ICBO

VCBO

VCEO

VEBO

hFE1

*1

hFE2

VCE(sat)

VBE(sat)

fT

Cob

Conditions

VCB = –10V, IE = 0

IC = –10µA, IE = 0

IC = –1mA, IB = 0

IE = –10µA, IC = 0

VCE = –2V, IC = –0.5A

*2

VCE = –2V, IC = –1A

*2

IC = –0.4A, IB = –8mA

VCB = –10V, IE = 50mA, f = 200MHz

VCB = –10V, IE = 0, f = 1MHz

min

–15

–10

–7

130

60

typ

– 0.16

– 0.8

130

22

max

–100

350

– 0.3

–1.2

Unit

nA

V

MHz

pF

*1h

FE1 Rank classification

Rank

R

S

hFE1

130 ~ 220

180 ~ 350

Marking Symbol

1RR

1RS

Marking symbol :

1R

*2 Pulse measurement

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