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L8550QLT3G Datasheet(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Part # L8550QLT3G
Description  General Purpose Transistors PNP Silicon
PDF  4 Pages
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Manufacturer  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Direct Link  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

L8550QLT3G Datasheet(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

  L8550QLT3G Datasheet HTML 1Page - Shanghai Leiditech Electronic Technology Co., Ltd L8550QLT3G Datasheet HTML 2Page - Shanghai Leiditech Electronic Technology Co., Ltd L8550QLT3G Datasheet HTML 3Page - Shanghai Leiditech Electronic Technology Co., Ltd L8550QLT3G Datasheet HTML 4Page - Shanghai Leiditech Electronic Technology Co., Ltd  
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ON CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
DC Current Gain
H FE
100
–
600
(I C =-100mA, VCE=-1V)
Collector-Emitter Saturation Voltage
VCE(S)
–
–
-0.5
V
(I C =-800mA, IB=-80mA)
NOTE:
*
PQ
R
S
hFE
100~200
150~300
200~400
300~600
(T A = 2
5 °C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFFCHARACTERISTICS
Collector-Emitter Breakdown Voltage
V (BR)CEO
-25
–
–
V
(I C =-1.0mA)
Emitter-Base Breakdown Voltage
V (BR)EBO
(I E = -100
µA)
Collector-Base Breakdown voltage
V (BR)CBO
-40
–
–
V
(I C= -100
µA)
Collector Cutoff Current
I CBO
–
–
-150
nA
(VCB = -35 V)
Emitter Cutoff Current
I EBO
–
–
-150
nA
(VEB = -4V)
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ELECTRICAL CHARACTERISTICS
-5
–
–
V
S-L8550PLT1G Series
L8550PLT1GSeries
Rev :
www.leiditech.com
01.06.2017
2/4



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