PDM505HA datasheet(1/3 Pages) NIEC

Part #	PDM505HA

Description	MOSFET MODULE Dual 50A/500V

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	NIEC [Nihon Inter Electronics Corporation]

Direct Link	http://www.niec.co.jp

Logo

1 / 3 page

MOSFET MODULE

MODULE

MODULE Dual 50A /500V

Dual 50A /500V

PDM505HA

MAXMUM RATINGS

Ratings

Symbol

PDM505HA

Unit

Drain-Source Voltage (VGS=0V)

VDSS

500

V

Gate -Source Voltage

VGSS

+/ - 20

V

Duty=50%

50 (Tc=25

°C)

Continuous Drain Current

D.C.

ID

35 (Tc=25

°C)

A

Pulsed Drain Current

IDM

100 Tc=25

°C)

A

Total PowerDissipation

PD

350 Tc=25

°C)

W

OperatingJunction Temperature Range

Tjw

-40 to +150

°C

Storage Temperature Range

Tstg

-40 to +125

°C

Isolation Voltage Terminals to Base AC, 1 min.)

VISO

2000

V

Module Base to Heatsink

3.0

MountingTorque

Bus Bar to Main Terminals

FTOR

2.0

N

•m

ELECTRICAL CHARACTERISTICS (@Tc=25°Cunlessotherwisenoted)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

VDS=VDSS,VGS=0V

-

1.0

Zero Gate Voltage Drain Current

IDSS

Tj=125

°C,VDS=VDSS,VGS=0V

-

4.0

mA

Gate-Source ThresholdVoltage

VGS(th)

VDS=VGS, ID=3mA

2.0

3.1

4.0

V

Gate-Source Leakage Current

IGSS

VGS=+/- 20V,VDS=0V

-

0.3

µA

StaticDrain-Source On-Resistance

rDS(on)

VGS=10V, ID=25A

-

110

120

m-ohm

Drain-Source On-Voltage

VDS(on)

VGS=10V, ID=25A

-

3.2

3.4

V

Forward Transconductance

gfs

VDS=15V, ID=25A

-

30

-

S

InputCapacitance

Cies

-

8.4

-

nF

OutputCapacitance

Coss

-

1.1

-

nF

Reverse TransferCapacitance

Crss

VDS=25V,VGS=0V,f=1MHz

-

0.24

-

nF

Turn-On DelayTime

td(on)

-

92

-

Rise Time

tr

-

110

-

Turn-Off Delay Time

td(off)

-

250

-

Fall Time

tf

VDD=1/2VDSS

ID=25A

VGS=-5V, +10V

RG=5 ohm

-

68

-

ns

FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Continuous Source Current

IS

D.C.

-

35

A

PulsedSource Current

ISM

-

100

A

Diode ForwardVoltage

VSD

IS=50A

-

1.5

V

Reverse RecoveryTime

trr

-

80

-

ns

Reverse Recovery

Qr

IS=50A, -dis/dt=100A/

µs

-

0.18

-

µC

THERMAL CHARACTERISTICS

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

MOSFET

-

0.36

Thermal Resistance, Junction to Case

Rth(j-c)

Diode

-

2.0

Thermal Resistance, Case to Heatsink

Rth(c-f)

Mountingsurface flat, smooth, and greased

-

0.1

°C/W

Dimension(mm)

FEATURES

* Dual MOSFETs Cascaded Circuit

* Prevented Body Diodes of MOSFETs by

SBDs, and Ultra Fast Recovery Diodes

Connectedin Parallel

* 300KHzHigh Speed SwitchingPossible

TYPICAL APPLICATIONS

* PowerSupplyforthe Communications and

the Induction Heating

Approximate Weight:220g

OUTLINE DRAWING

Circuit

108.0

Similar Part No. - PDM505HA

Manufacturer	Part #	Datasheet	Description
Nihon Inter Electronics...	PDM505HA	117Kb / 3P	50A 500V
Nihon Inter Electronics...	PDM505HA	117Kb / 3P	50A 500V
National Instruments Co...	PDM505HA	117Kb / 3P	MOSFET

More results

Similar Description - PDM505HA

Manufacturer	Part #	Datasheet	Description
Nihon Inter Electronics...	PD4M440H	64Kb / 3P	MOSFET MODULE Dual 30A 450/500V
	PD10M440H	67Kb / 3P	MOSFET MODULE DUAL 85A 450V/500V
	PDM1405HA	70Kb / 3P	MOSFET MODULE Dual 140A/500V
	PC50F5	29Kb / 2P	FRD MODULE 50A/500V/trr:90nsec
	PD7M440H	66Kb / 3P	MOSFET MODULE Dual 50A 450V/500V
	PD7M440L	128Kb / 4P	MOSFET MODULE Dual 50A 450V/550V
	PDM505HC	113Kb / 3P	MOSFET MODULE Dual 50A/500V
	PD7M440L	121Kb / 3P	50A 450~500V
	PDM505HA	117Kb / 3P	50A 500V
	PDM505HC	104Kb / 3P	50A 500V

More results

PDM505HA Datasheet(PDF) 1 Page - Nihon Inter Electronics Corporation

PDM505HA Datasheet(HTML) 1 Page - Nihon Inter Electronics Corporation

Similar Part No. - PDM505HA

Similar Description - PDM505HA

Html Pages

1 2 3

Datasheet Download

Link URL