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2SC1518 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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2SC1518 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
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1 / 3 page ![]() 1 Transistor 2SC1518 Silicon NPN epitaxial planer type For high-frequency bias oscillation of tape recorders For DC-DC converter s Features q Low collector to emitter saturation voltage VCE(sat). q Satisfactory operation performances and high efficiency with a low-voltage power supply. s Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package 5.9 ±0.2 2.54 ±0.15 0.7 ±0.1 4.9 ±0.2 0.45 +0.2 –0.1 1.27 1.27 0.45 +0.2 –0.1 13 2 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 25 20 5 1.5 1 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Base to emitter saturation voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO ICEO VCBO VCEO VEBO hFE1 *1 hFE2 VBE(sat) VCE(sat) fT Cob Conditions VCB = 25V, IE = 0 VCE = 20V, IB = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 500mA *2 VCE = 2V, IC = 1A *2 IC = 500mA, IB = 50mA *2 IC = 1A, IB = 50mA *2 VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min 25 20 5 90 50 typ 100 150 12 max 100 1 330 1.2 0.5 20 Unit nA µA V V V V V MHz pF *1h FE1 Rank classification Rank Q R S hFE1 90 ~ 155 130 ~ 220 185 ~ 330 *2 Pulse measurement |
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