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PDMB75B12 Datasheet(PDF) 1 Page - Nihon Inter Electronics Corporation |
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PDMB75B12 Datasheet(HTML) 1 Page - Nihon Inter Electronics Corporation |
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1 / 3 page  IGBT MODULE MODULE MODULE MODULE Dual 75A 1200V Dual 75A 1200V Dual 75A 1200V Dual 75A 1200V PDMB75B12 PDMB75B12 PDMB75B12 PDMB75B12 CIRCUIT OUTLINE DRAWING MAXMUM RATINGS (Tc=25°C) Item Symbol PDMB75B12 Unit Collector-EmitterVoltage VCES 1200 V Gate- EmitterVoltage VGES +/ -20 V DC IC 75 CollectorCurrent 1ms ICP 150 A CollectorPowerDissipation PC 400 W JunctionTemperature Range Tj -40 to +150 °C StorageTemperature Range Tstg -40 to +125 °C IsolationVoltage Terminal toBase AC,1min.) VISO 2500 V ModuleBase to Heatsink 3 MountingTorque Bus Bar to Main Terminals FTOR 2 N •m ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-EmitterCut-OffCurrent ICES VCE=1200V,VGE=0V - - 2.0 mA Gate-EmitterLeakage Current IGES VGE=+/-20V,VCE=0V - - 1.0 µA Collector-EmitterSaturation Voltage VCE(sat) IC=75A,VGE=15V - 1.9 2.4 V Gate-EmitterThresholdVoltage VGE(th) VCE=5V,IC=75mA 4.0 - 8.0 V InputCapacitance Cies VCE=10V,VGE=0V,f=1MHz - 6300 - pF RiseTime tr - 0.25 0.45 Turn-onTime ton - 0.40 0.70 Fall Time tf - 0.25 0.35 SwitchingTime Turn-off Time toff VCC=600V RL= 8 ohm RG= 13ohm VGE=+/-15V - 0.80 1.00 µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Unit DC IF 75 ForwardCurrent 1ms IFM 150 A Characteristic Symbol Test Condition Min. Typ. Max. Unit PeakForwardVoltage VF IF=75A,VGE=0V - 1.9 2.4 V Reverse RecoveryTime trr IF=75A,VGE=-10V,di/dt=150A/ µs - 0.2 0.3 µs THERMAL CHARACTERISTICS Characteristic Symbol Test Condition Min. Typ. Max. Unit IGBT - - 0.3 ThermalImpedance DIODE Rth(j-c) JunctiontoCase - - 0.6 °C/W 4-fasten-tabNo110 Dimension(mm) ApproximateWeight:320g |
Similar Part No. - PDMB75B12 |
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Similar Description - PDMB75B12 |
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