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NCE6008AS Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Part # NCE6008AS
Description  LCE N-Channel Enhancement Mode Power MOSFET
PDF  6 Pages
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Manufacturer  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Direct Link  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

NCE6008AS Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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LCE6008AS
Description
The LCE6008AS uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
●
VDS = 60V,ID =8A
RDS(ON) < 20mΩ @ VGS=10V (Typ:14.5mΩ)
●
High density cell design for ultra low Rdson
●
Fully characterized avalanche voltage and current
●
Low gate to drain charge to reduce switching losses
Application
●
Power switching application
●
Load switch
Schematic diagram
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
LCE6008AS
NCE6008AS
SOP-8
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
Drain Current-Continuous
ID
8
A
Drain Current-Continuous(TC=100℃)
ID (100℃)
5.6
A
Pulsed Drain Current
IDM
32
A
Maximum Power Dissipation
PD
2.1
W
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note 2)
RθJA
60
/W
℃
Rev :
www.leiditech.com
01.06.2014
1/6
LCE N-Channel Enhancement Mode Power MOSFET


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