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LM04P021 Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LM04P021 Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 6 page ![]() Device Marking and Package Information Device Package Marking LM04P021 SOP-8 FEATURES ⚫ Super Low Gate Charge ⚫ RoHS compliant ⚫ Green Device Available ⚫ Excellent CdV/dt effect decline ⚫ Advanced high cell density Trench technology APPLICATIONS ⚫ Switch Mode Power Supply (SMPS) ⚫ Uninterruptible Power Supply (UPS) ⚫ Power Factor Correction (PFC) Absolute Maximum Ratings at Tj= 25ºC unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage (VGS = 0V) VDSS -40 V Continuous Drain Current (note1) ID -8.0 A Pulsed Drain Current (note2) IDM -32 A Gate Source Voltage VGSS ± 20 V Power Dissipation TA = 25ºC (note4) PD 3.5 W Operating Junction and Storage Temperature Range TJ, Tstg -55~+175 ºC Thermal Characteristics Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient (note1) RθJA 42 K/W LM04P021 Trench MOSFET P-Channel Rev : www.leiditech.com 01.06.2018 1/6 |
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