FTK4459 datasheet(2/4 Pages) FS

2 / 4 page

FTK4459

2013. 01. 02

2/4

Revision No : 0

Electrical characteristics (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

STATIC PARAMETERS

Drain-source breakdown voltage

V(BR)DSS

VGS = 0V, ID =-250µA

-30

Zero gate voltage drain current

IDSS

VDS =-30V,VGS = 0V

-1

µA

Gate-body leakage current

IGSS

VGS =±20V, VDS = 0V

±100

Gate threshold voltage (note 4)

VGS( h)

VDS =VGS, ID =-250µA

-1.4

-2.4

VGS =-10V, ID =-6.5A

mΩ

Drain-source on-resistance (note 4)

RDS(on)

VGS =-4.5V, ID =-5A

mΩ

Forward tranconductance (note 4)

gFS

VDS =-5V, ID =-6.5A

Diode forward voltage (note 4)

VSD

IS=-1A, VGS = 0V

-1

DYNAMIC PARAMETERS (note 5)

Input Capacitance

Ciss

415

625

Output Capacitance

Coss

130

Reverse Transfer Capacitance

Crss

VDS =-15V,VGS =0V,f =1MHz

SWITCHING PARAMETERS (note 5)

Turn-on delay time

td(on)

7.5

Turn-on rise time

5.5

Turn-off delay time

td(off)

Turn-off fall time

VGS=-10V,VDS=-15V,

RL=2.5Ω,RGEN=3Ω

Total Gate Charge (10V)

7.4

Total Gate Charge (4.5V)

3.7

Gate-Source Charge

Qgs

1.3

1.9

Gate-Drain Charge

Qgd

VDS =-15V,VGS =-10V,ID=-6.5A

1.3

3.1

Notes :

1. Repetitive rating : Pulse width limited by junction temperature TJ(MAX)=150

℃. Ratings are based on low frequency and

duty cycles to keep initial TJ=25

℃.

2. The power dissipation PD is based on TJ(MAX)=150

℃, using ≤10s junction-to-ambient thermal resistance.

3. The value in any given application depends on the user’s specific board design.

4. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%.

5. These parameters have no way to verify.

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