1

Transistor

2SC2206

Silicon NPN epitaxial planer type

For high-frequency amplification

Complementary to 2SA1254

q

Optimum for RF amplification of FM/AM radios.

q

q

M type package allowing easy automatic and manual insertion as

well as stand-alone fixing to the printed circuit board.

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Base

2:Collector

EIAJ:SC–71

3:Emitter

M Type Mold Package

6.9

±0.1

0.55

±0.1

0.45

±0.05

2.5

±0.1

1.0

1.5

1.5 R0.9

R0.9

0.85

2.5

2.5

1

2

3

Symbol

Ratings

30

20

5

30

400

150

–55 ~ +150

Unit

V

V

V

mA

mW

˚C

˚C

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter voltage

Transition frequency

Noise figure

Common emitter reverse transfer capacitance

Reverse transfer impedance

Symbol

*

NF

Conditions

min

30

20

5

70

150

typ

0.1

0.7

300

2.8

max

220

4

1.5

50

Unit

V

V

V

V

V

MHz

dB

pF

Ω

Rank

B

C

70 ~ 140

110 ~ 220