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PDMB100B12C2 Datasheet(PDF) 1 Page - Nihon Inter Electronics Corporation |
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PDMB100B12C2 Datasheet(HTML) 1 Page - Nihon Inter Electronics Corporation |
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1 / 3 page  IGBT MODULE MODULE MODULE MODULE Dual 100A 1200V Dual 100A 1200V Dual 100A 1200V Dual 100A 1200V PDMB100B12C2 PDMB100B12C2 PDMB100B12C2 PDMB100B12C2 CIRCUIT OUTLINE DRAWING MAXMUM RATINGS (Tc=25°C) Item Symbol PDMB100B12C2 Unit Collector-EmitterVoltage VCES 1200 V Gate -EmitterVoltage VGES +/ - 20 V DC IC 100 CollectorCurrent 1 ms IC 200 A CollectorPowerDissipation PC 500 W Junction Temperature Range Tj -40 to +150 °C Storage Temperature Range Tstg -40 to +125 °C IsolationVoltage Terminal to Base AC,1 min.) VISO 2500 V ModuleBasetoHeatsink MountingTorque BusBartoMainTerminals FTOR 2.04 N •m ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-EmitterCut-OffCurrent ICES VCE=1200V,VGE=0V - - 2.0 mA Gate-EmitterLeakage Current IGES VGE=+/- 20V,VCE=0V - - 1.0 µA Collector-EmitterSaturation Voltage VCE(sat) IC=100A,VGE=15V - 1.9 2.4 V Gate-EmitterThresholdVoltage VGE(th) VCE=5V,IC=100mA 4.0 - 8.0 V InputCapacitance Cies VCE=10V,VGE=0V,f=1MHz - 8300 - pF Rise Time ｔ r − 0.25 0.45 Turn-onTime ｔ on − 0.40 0.7 FallTime ｔ f − 0.25 0.35 SwitchingTime Turn-offTime ｔ off VCC=600V RL=6 ohm RG=10 ohm VGE=+/- 15V − 0.80 1.10 µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Unit DC IF 100 ForwardCurrent 1 ms IFM 200 A Characteristic Symbol Test Condition Min. Typ. Max. Unit PeakForward Voltage VF IF=100A,VGE=0V - 1.9 2.4 V Reverse RecoveryTime trr IF=100A,VGE=-10V,di/dt=200A/ µs - 0.2 0.3 µs THERMAL CHARACTERISTICS Characteristic Symbol Test Condition Min. Typ. Max. Unit IGBT - - 0.24 Thermal Impedance DIODE Rth(j-c) Junction to Case - - 0.42 °C/W 4-fasten-tabNo110 Dimension(mm) Approximate Weight:220g |
Similar Part No. - PDMB100B12C2 |
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Similar Description - PDMB100B12C2 |
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