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LM4012 Datasheet(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Part # LM4012
Description  N-ChannelEnhancement Mode Power MOSFET
PDF  6 Pages
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Manufacturer  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Direct Link  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LM4012 Datasheet(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
40
---
---
V
IDSS
Drain-Source Leakage Current
VDS=40V , VGS=0V
---
---
1
uA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0V
---
---
±100
nA
On Characteristics
3
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
1.2
1.6
2.5
V
RDS(ON)
Static Drain-Source On Resistance
VGS=10V,ID=10A
---
8.4
12
mΩ
VGS=4.5V,ID=8A
---
12.3
18
GFS
Forward Transconductance
VDS=5V, ID=10A
---
75
---
S
Dynamic Characteristics
4
Ciss
Input Capacitance
VDS=20V, VGS=0V, f=1MHz
---
1780
---
pF
Coss
Output Capacitance
---
209
---
Crss
Reverse Transfer Capacitance
---
160
---
Switching Characteristics
4
td(on)
Turn-On Delay Time
VDS=20V, ,
RGEN=3Ω, VGS=10V
---
6.4
---
ns
tr
Rise Time
---
17.2
---
ns
td(off)
Turn-Off Delay Time
---
29.6
---
ns
tf
Fall Time
---
16.8
---
ns
Qg
Total Gate Charge
VGS=10V, VDS=20V,
ID=10A
---
30
---
nC
Qgs
Gate-Source
Charge
---
4.2
---
nC
Qgd
Gate-Drain “Miller” Charge
---
9.5
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
3
VGS=0V,IS=10A,TJ=25℃
---
---
1.2
V
LM4012
Rev :
www.leiditech.com
01.06.2018
2/6



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