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LM4906 Datasheet(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Part # LM4906
Description  N-Channel Enhancement Mode Power MOSFET
PDF  5 Pages
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Manufacturer  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Direct Link  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LM4906 Datasheet(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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Electrical Characteristics (TJ=25℃ unless otherwise noted)
Symbol
Parameter
Condition
Min
Typ
Max
Unit
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
V
GS=0V ID=250μA
40
V
I
DSS
Zero Gate Voltage Drain Current
V
DS=40V,VGS=0V
1
μA
I
GSS
Gate-Body Leakage Current
V
GS=±20V,VDS=0V
±100
nA
V
GS(th)
Gate Threshold Voltage
V
DS=VGS,ID=250μA
1.0
1.6
2.5
V
R
DS(ON)
Drain-Source On-State Resistance
V
GS=10V, ID=8A
7
9
mΩ
V
GS=4.5V, ID=4A
9.5
13
mΩ
DYNAMIC PARAMETERS
Ciss
Input Capacitance
V
DS=25V,VGS=0V,
F=1.0MHz
1200
pF
Coss
Output Capacitance
130
pF
Crss
Reverse Transfer Capacitance
55
pF
SWITCHING PARAMETERS
td(on)
Turn-on Delay Time
V
DD=15V,ID=1A,
V
GS=10V,
R
G=3.3Ω
13.2
nS
tr
Turn-on Rise Time
2.2
nS
td(off)
Turn-Off Delay Time
72
nS
tf
Turn-Off Fall Time
4.5
nS
Qg
Total Gate Charge
V
DS=20V,ID=8A,
VGS=4.5V
12.2
nC
Qgs
Gate-Source Charge
3.3
nC
Qgd
Gate-Drain Charge
6.7
nC
VSD
Diode Forward Voltage
VGS=0V,ISD=1A
0.72
1.3
V
Rg
Gate resistance
VGS=0V, VDS=0V,
F=1MHz
2.2
Ω
Note：
1.
Repetitive Rating : Pulsed width limited by maximum junction temperature.
2.
The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3.
Essentially independent of operating temperature.
LM4906
Rev :
www.leiditech.com
01.06.2018
2/5



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