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LM4953 Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Part # LM4953
Description  P-ChannelEnhancement Mode Power MOSFET
PDF  5 Pages
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Manufacturer  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Direct Link  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LM4953 Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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LM4953
Product Summary
● VDS
-30V
● ID
-5.1A
● RDS(ON)( at VGS=-10V)
＜59 mohm
● RDS(ON)( at VGS=-4.5V)
＜75 mohm
General Description
● Trench Power LV MOSFET technology
● High density cell design for Low RDS(ON)
● High Speed switching
Applications
● Battery protection
● Load switch
● Power management
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Maximum
Unit
Drain-source Voltage
VDS
-30
V
Gate-source Voltage
VGS
±20
V
Drain Current
TA=25℃ @ Steady State
ID
-5.1
A
TA=70℃ @ Steady State
-4.1
Pulsed Drain Current A
IDM
-20
A
Single Pulse Avalanche Energy
EAS
20
mJ
Total Power Dissipation @ TA=25℃
PD
2.5
W
Thermal Resistance Junction-to-Ambient @ Steady State
RθJA
50
℃/ W
Junction and Storage Temperature Range
TJ ,TSTG
-55～+150
℃
■ Ordering Information (Example)
PREFERED P/N
PACKING
CODE
Marking
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY MODE
LM4953
F2
Q4953
4000
8000
64000
13
“ reel
Enhancement Mode Power MOSFET
P-Channel
Rev :
www.leiditech.com
01.06.2018
1/5


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