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FTK4828 Datasheet(PDF) 1 Page - First Silicon Co., Ltd

Part # FTK4828
Description  Dual N-Channel MOSFET
PDF  4 Pages
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Manufacturer  FS [First Silicon Co., Ltd]
Direct Link  http://www.firstsilicon.co.kr/
Logo FS - First Silicon Co., Ltd

FTK4828 Datasheet(HTML) 1 Page - First Silicon Co., Ltd

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FTK4828
2013. 03. 15
1/4
SEMICONDUCTOR
TECHNICAL DATA
Revision No : 0
N-channel
N-channel
Schematic diagram
G 1
S 1
G 2
S 2
4
1
D 1
D 1
D 2
D 2
5
8
Q4 828
Marking and pin Assignment
SOP-8
top view
2
3
6
7
Dual N-Channel MOSFET
DESCRIPTION
The FTK4828 uses advanced trench
te chnology to provide excellent
RDS(ON) and low gate charge.
This device is suitable for use as a load switch
or in PWM applications.
Maximum ratings (Ta=25℃ unless otherwise noted)
VDS (V) = 60V
ID = 4.5A (VGS = 10V)
RDS(ON) < 56mΩ (VGS = 10V)
RDS(ON) < 77mΩ (VGS = 4.5V)
FEATURES
l
o
b
m
y
S
r
e
t
e
m
a
r
a
P
Value
Units
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current (t
≤10s
I
)
1
e
t
o
n
(
)
D
4.5
A
Pulsed Drain Current (note 2)
IDM
20
A
Power Dissipation
PD
1.25
W
Thermal Resistance from Junction to Ambient (t
≤10s) (note 1)
RθJA
100
℃/W
Avalanche Current (note 2)
IAR,IAS
19
A
Repetitive Avalenche Energy 0.1mH (note 2)
EAR,EAS
18
mJ
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55~ 150
℃
AEC-Q101 qualified


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