2019. 02. 11

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SEMICONDUCTOR

TECHNICAL DATA

FTK4906D

Revision No : 1

40V N-Channel MOSFETs

BVDSS

RDSON

ID

40V

8.5m

Ω

50A

These N-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

 40V,50A, RDS(ON) =8.5

mΩ@VGS = 10V

 Improved dv/dt capability

 Fast switching

 100% EAS Guaranteed

 Green Device Available

General Description

Features

Applications

Thermal Characteristics

TO-252 Pin Configuration

 Notebook

 Load Switch

 LED applications

 Hand-Held Device

Symbol

Parameter

Rating

Units

Drain-Source Voltage

40

V

Gate-Sou

rce Voltage

± 20

V

50

A

31.6

A

Drain Current – Pulsed

1

200

A

54

W

Power Dissipation – Derate above 25℃

0.43

W/℃

Storage Temperature Range

-55 to 150

℃

Operating Junction Temperature Range

-55 to 150

℃

Symbol

Parameter

Typ.

Max.

Unit

Thermal Resistance Junction to ambient

---

62

℃/W

Thermal Resistance Junction to Case

---

2.31

℃/W

1

1. Gate

2. Drain

3. Source

3

2