40V N-Channel MOSFETs

Symbol

Parameter

Rating

Units

Drain-Source Voltage

40

V

Gate-Sou

rce Voltage

±20

V

℃)

35

A

℃)

22.1

A

140

A

℃)

44

W

Power Dissipation – Derate above 25

℃

0.36

W/

℃

Storage Temperature Range

-55 to 150

℃

Operating Junction Temperature Range

-55 to 150

℃

Symbol

Parameter

Typ.

Max.

Unit

Thermal Resistance Junction to ambient

---

62

℃/W

Thermal Resistance Junction to Case

---

2.8

℃/W

BVDSS

RDSON

ID

40V

9m

Ω

35A

These N-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

 40V, 35A, RDS(ON)=9m

Ω@VGS = 10V

 Improved dv/dt capability

 Fast switching

 Green Device Available

General Description

Features

Applications

 Notebook

 Load Switch

 LED applications

 Hand-Held Device

Thermal Characteristics

PPAK3x3 Pin Configuration

D

G

S

S

D

G

S

S

D D

D

1

5

4

8

2019. 07. 10

1/5

Revision No : 0

SEMICONDUCTOR

TECHNICAL DATA

FTK4906Z