40V N-Channel MOSFETs

Symbol

Parameter

Rating

Units

Drain-Source Voltage

40

V

Gate-Sou

rce Voltage

±20

V

℃)

23

A

℃)

14.5

A

92

A

℃)

25

W

Power Dissipation – Derate above 25

℃

0.2

W/

℃

Storage Temperature Range

-50 to 150

℃

Operating Junction Temperature Range

-50 to 150

℃

BVDSS

RDSON

ID

40V

30m

Ω

23A

Symbol

Parameter

Typ.

Max.

Unit

Thermal Resistance Junction to ambient

---

62

℃/W

Thermal Resistance Junction to Case

---

5

℃/W

These N-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications.

 40V,23A, RDS(ON) =30m

Ω@VGS = 10V

 Improved dv/dt capability

 Fast switching

 100% EAS Guaranteed

 100% PB free and Green Device Available

General Description

Features

Applications

Thermal Characteristics

TO-252 Pin Configuration

D

G

S

D

G

S

 Networking

 Load Switch

 LED applications

2018. 06. 14

1/5

Revision No : 0

SEMICONDUCTOR

TECHNICAL DATA

FTK4912D